Datasheet4U Logo Datasheet4U.com

Si4542DY - 30V Complementary PowerTrench MOSFET

Features

  • This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

📥 Download Datasheet

Datasheet preview – Si4542DY

Datasheet Details

Part number Si4542DY
Manufacturer onsemi
File Size 158.34 KB
Description 30V Complementary PowerTrench MOSFET
Datasheet download datasheet Si4542DY Datasheet
Additional preview pages of the Si4542DY datasheet.

📁 Similar Datasheet

  • Si4542DY - N- and P-Channel 30-V MOSFET (Vishay)
  • Si4542DY - 30V Complementary PowerTrench MOSFET (Fairchild Semiconductor)
  • Si4544DY - N- and P-Channel 30-V (D-S) MOSFET (Vishay)
  • SI4500BDY - Complementary MOSFET (Vishay Siliconix)
  • SI4500DY - Complementary MOSFET (Vishay Siliconix)
  • SI4501ADY - Complementary MOSFET (Vishay Siliconix)
  • SI4501BD - MOSFET (Vishay)
  • Si4501BDY - Complementary (N- and P-Channel) MOSFET (Vishay)
  • SI4501DY - Complementary MOSFET (Vishay Siliconix)
  • SI4505DY - MOSFET (Vishay Siliconix)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Si4542DY Si4542DY 30V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Q1: N-Channel 6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V • Q2: P-Channel –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.
Published: |